Main > ELECTRONICS. > DiElectrics > Low-k DiElectrics > CVD Low-k DiElectrics (+ Important) > Co.: USA. Ap. (Porous C Doped SiO2)

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Co.: USA. Ap. (Porous C Doped SiO2)'s subsections
Chemistry>
Company
Generation: < 45-nm
k < 2.5
NanoCure UV>Used To>
Patent>CVD Production Method
Patent>Total USA No.: 2
Patent>UpDate: 03.13.07
Patent>UV Cure>Mechanical Strength
Patent>Z US Expiration: 03.04.2023
Plasma Enhanced CVD
TradeMark
UpDate: 08.08.05
Web-Site

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