Main > ELECTRONICS. > DiElectrics > Low-k DiElectrics > CVD Low-k DiElectrics (+ Important) > Co.: USA. N. (Porous C Doped SiO2)

---

Co.: USA. N. (Porous C Doped SiO2)'s subsections
Company
Generation: 65 nm & Beyond
k = 2.3-2.5
Partner:
Plasma Enhanced CVD
Porogen: CxHy
Precursor: HexaMeCycloHexaSiloxane
Status: Development
TradeMark
UltraViolet Thermal Processing
UpDate: 09.21.2005
Web-Site

Co.: USA. N. (Porous C Doped SiO2)'s products
This section has no products