Main > ELECTRONICS. > DiElectrics > High-k DiElectrics > Hafnium Oxide (HfO2) > Co.: USA. H. (Etching>Patent)

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Co.: USA. H. (Etching>Patent)'s subsections
Company
Fluorinated Compd. Solvent
Patent>Pending
UpDate: 05.27.05
Use>After Ion Sputtering Dry Etch.>

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