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Single-crystal GaN nanotubes

Single-crystal gallium nitride (GaN) nanotubes have been grown, apparently for the first time. Authors use a novel casting technique: They first grow a dense forest of zinc oxide nanowires on a wafer and then use chemical vapor deposition to coat the nanowires with gallium nitride. Since the crystal lattices of ZnO and GaN have similar dimensions, the GaN layer grows in crystallographic alignment with the ZnO template. The researchers remove the ZnO by heating the samples to 600 °C in hydrogen. The GaN nanotubes, which have inner diameters ranging from 30 to 200 nm and wall thicknesses between 5 and 50 nm, are electrically and optically active. Thus, they offer opportunities for fundamental research



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