Main > > Al Nitride Substrate > Metal Layer

Product Japan. T

PATENT ASSIGNEE'S COUNTRY Japan
UPDATE 07.99
PATENT ASSIGNEE Toshiba KK
PATENT CLAIMS Formed by simultaneously sintering Al nitride substrate & metal layer consisting of metal material
- Tungsten (main comp)
- Mn (0.001-2%)
- Cu (0.0001-2%)
PATENT PHOTOCOPY Available on request

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