| PATENT ASSIGNEE'S COUNTRY | USA |
| UPDATE | 09.99 |
| PATENT ASSIGNEE | Texas Instruments |
| PATENT CLAIMS |
- Generating vapor phase etchant by electromagnetic excita tion of source gas mixt contg O & F - Exposing said layer to said etchant; performed without ion bombardment of structure |
| PATENT PHOTOCOPY | Available on request |
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