| PATENT ASSIGNEE'S COUNTRY | Taiwan |
| UPDATE | 10.99 |
| PATENT ASSIGNEE | Taiwan Semiconductor Mfg Co Ltd |
| PATENT CLAIMS |
- Providing a substrate - Forming virgin Ti nitride layer by CVD - Annealing in first plasma comprising N & H - Annealing in second plasma comprising only N |
| PATENT PHOTOCOPY | Available on request |
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