| PATENT ASSIGNEE'S COUNTRY | Japan |
| UPDATE | 10.99 |
| PATENT ASSIGNEE | Sony Corp |
| PATENT CLAIMS |
Plasma CVD method for forming metal film on substrate using plasma made from mixed gas comprising mixt of metal halide & H - Taking an emission spectrum of said plasma of mixed gas - Adjusting ratio of said metal halide & H in mixed gas based on emission spectrum |
| PATENT PHOTOCOPY | Available on request |
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