| PATENT ASSIGNEE'S COUNTRY | Japan |
| UPDATE | 02.00 |
| PATENT ASSIGNEE | Showa Denko |
| PATENT CLAIMS |
Tri- or higher silane mfg from mono- or di-silane - First reacting first silane (mono- &/or di-silane) in first zone at hirst T > RT to form second silane including increased amount of di- or higher silane than first silane - Secondly reacting reaction prodt of first zone at second T > RT in second zone to form third silane including tri- or higher-silane Provided that second T is < than first T |
| PATENT PHOTOCOPY | Available on request |
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