| PATENT ASSIGNEE'S COUNTRY | Japan; USA |
| UPDATE | 09.99 |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT CLAIMS |
Method of enhancing Cu adhesion to substrate comprising: Prepg single-crystal Si substrate; Forming IC comp. on active areas of substrate; Introducing substrate into CVD process chamber; Metallizing the IC comp with CVD Cu including - Depositing Cu in chamber by CVD using a liquid Cu pre cursor having flow rate 0.01-0.1 cubic.cm/min to produce a first Cu layer on IC comp., having 1-100 nm thickness - Depositing Cu in chamber by CVD using above precursor at flow rate 0.5-5 cubic.cm/min having 200-1,500 nm thick ness |
| PATENT PHOTOCOPY | Available on request |
|
Want more information ? Interested in the hidden information ? Click here and do your request. |