| PATENT ASSIGNEE'S COUNTRY | Japan |
| UPDATE | 10.99 |
| PATENT ASSIGNEE | Semiconductor Energy Laboratory |
| PATENT CLAIMS |
- Forming Si oxide film on surface - Introducing N2O into chamber in which heat treat is carried out - Irradiating UV light onto N2O & Si oxide film surface at 300-700C in N2O atm Wherein Si oxide film surface is nitrided |
| PATENT PHOTOCOPY | Available on request |
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