DESCRIPTION |
Co. announced today the release of RTM. Bottom Anti-Reflective Coatings. RTM. products are designed for use in semiconductor manufacturing to improve and extend photolithographic processes. Currently in high volume production, RTM. prodt. is a patented* sacrificial organo-siloxane based polymer that meets the lithographic and etch requirements for advanced patterning. These include BARC capabilities, fill and local planarization of topography and tunable etch performance. Designed with an inorganic polymer backbone, RTM. coatings possess an intrinsic etch selectivity to organic photoresist. Moreover, RTM.'s tunable etch rate provides maximum process flexibility. RTM coatings, with formulations available for both 248nm and 193nm photolithography, absorb light passing through the photoresist layer. Absorption is required to remove scattered light reflecting back up into the photoresist thereby improving the photolithographic process by eliminating standing waves, jagged edges or reflective notching, thereby improving Critical Dimension (CD) control. "RTM. coatings will provide solutions to key challenges customers are facing with copper dual damascene processing schemes." "We are committed to offering novel solutions to our customers…it is a principle reason for our investment in the Star Center which is the source of this important advancement." |
UPDATE | 03.06.02 |
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