| AGREEMENT |
Photoresists for 157nm Exposure Technology Infineon Technologies (FSE/NYSE: IFX) and Clariant Corporation’s AZ Electronic Materials business (Somerville, N.J., USA) have signed an agreement to jointly develop photoresists for 157 nm exposure technology. The goal is to accelerate qualification of this technology for volume production. The photoresist materials to be developed in this project will specifically enable Infineon to qualify the 157 nm technology for producing 55 nm structures in DRAM (dynamic random access memory) semiconductor chip production. The International Technology Roadmap for Semiconductors, which describes the technology and materials needed for future chip generations, predicts that 55 nm structures will be in volume production beginning in 2007. One of the mainstream candidate technologies for achieving these dimensions is 157 nm lithography, a technology that uses fluorine molecular lasers emitting at the vacuum ultraviolet wavelength of 157 nm. To accelerate the photoresist development work, the companies will draw upon their joint chemical research and development capabilities and use Infineon’s most advanced lithographic equipment in Dresden, Germany. Infineon will have one of the earliest exposure tools available for 157 nm pilot production. Wilhelm Beinvogl, Infineon’s chief technology officer for memory products, says early access to such a tool is integral to accelerating the material and process development. “Because of the research and development capabilities and advanced processing equipment that this development project brings together, our companies are confident we can help make 157 nm photoresist available for the timely introduction of the 55 nm node,” says Clariant’s Dr. Ralph Dammel, director of technology for 193 nm and 157 nm products. Photoresists are light-sensitive materials that define the small patterns on the various layers of an integrated circuit. Lithographic technologies have evolved rapidly over the past few decades. Currently lithography at the 193 nm wavelength of light is entering volume production. The 193 nm wavelength has been introduced at Infineon to define sub-130 nm patterns. The157 nm wavelength is predicted to be the final usable optical wavelength. It is also predicted that non-optical “Next Generation Lithography” methods will be needed to produce even smaller structures. The 157 nm technology bridges the gap between 193 nm and Next Generation Lithography. |
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