| PATENT ASSIGNEE'S COUNTRY | Japan |
| UPDATE | 06.99 |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT CLAIMS |
- Tubular Al substrate formed by extruding & extracting an Al alloy ingot into tube & by washing tube, during which the ingot is heated for > 3 hours at 430-550C wherein a charge generating & transport. layers are laminated in sequence onto tubular Al substrate - Anodic oxidation film formed over outer surface of Al subs trate & subject to a sealing treat. at its surface with Ni aceta te soln carried out at 50-70C for 4-10 min, contact angle of film 30-80 degrees with respect pure water, an admittance of film 0.4-30 S/square.m, said Al substrate contg Fe (< 0.3% Mg (0.4-0.6%); Mn (< 0.1%), said Al substrate having crysta llized lumps whose max. diam. on av. is < 3 micro.m |
| PATENT PHOTOCOPY | Available on request |
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