Main > ELECTRONICS. > SemiConductor > Device > Photoresist > Positive Photoresist > Deep UV (157-nm) Photoresist > Polymer > FluoroPolymer > HeptaDienes Partial Fluorinated. > (Contg. -OH or -OR Substituents) > Radical CycloPolymn. > Strategy Pursued by:

Product Japan. AS

COOPERATION This data is not available for free
SYNTHESIS Authors start with two acyclic monomers that are cyclized during copolymerization to form a chain of monocyclic units that incorporate the essential functions.

The two key monomers in the approach are partially fluorinated heptadienes that carry either an alkoxy or hydroxy substituent. Radical cyclopolymerization of these building blocks yields a chain of partially fluorinated cyclopentyl units linked by CF2 and CH2 groups. The fluorocarbon segments provide high transparency at 157 nm, whereas the cyclopentyl groups and their bulky alkoxy substituents confer etch resistance. a third monomer may be added to the mix to tune the properties. Methacrylates, for instance, have been shown to markedly improve the polymer's dissolution rate.

The Japanese researchers have demonstrated that one of their fluoropolymers can be used as a 157-nm photoresist to pattern 65-nm-wide lines. Authors noted that they still haven't achieved the combination of properties they're aiming for, and work toward this goal continues.



UPDATE 03.03
LITERATURE REF. This data is not available for free

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