| STUDY |
fashioned the wires into test circuits that were fabricated using lithography methods and then studied the circuits' electrical properties. According to author, Si nanowire FETs, for example, perform remarkably well. The devices exhibit large on/off ratios (> 100000) a requirement for effective switches--and charge-carrier mobilities that exceed those measured in conventional silicon devices. |
| UPDATE | 09.02 |
| AUTHOR | This data is not available for free |
| LITERATURE REF. | This data is not available for free |
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