| STUDY |
semiconducting nanowires figure prominently into his research program. The tiny wires are versatile building blocks that can be used in a bottom-up approach to constructing nanoelectronic circuits. because the size, structure, and functional properties of nanowires can be controlled readily via synthesis procedures. In 1998, authors described a vapor-liquid-solid synthesis method in which laser light is used to ablate nanometer-sized metal clusters that serve as nucleation centers and catalysts for nanowire growth. The researchers used the technique to prepare uniform single-crystalline nanowires of silicon and germanium with diameters as small as 3 nm and lengths up to 30 mm. Since that time, the procedure has been used to prepare nanowires with even smaller diameters, and it's been extended to a wide variety of materials. Examples include III-V semiconductors such as GaAs and II-VI semiconductors such as ZnSe. Recently, a number of research groups boosted the complexity of materials that can be prepared by the cluster-nucleation method. The teams prepared modulated structures--nanowires composed of dissimilar segments. The two-tone materials are made by turning the supplies of reactants on and off during synthesis with pulsed lasers or by other methods. These "heterostructured" products open the door to new sophisticated applications, such as terahertz-frequency photon emitters. Authors used modulation methods to prepare nanowires with 21 alternating segments of GaAs and GaP. And they prepared Si and InP nanowires with modulated doping, such that the wires were endowed with alternating p- and n-type regions. |
| UPDATE | 09.02 |
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