| SYNTHESIS | prepared nanowires of gallium arsenide and gallium phosphide containing up to 21 distinct segments--a nanoscale bar code. also prepared silicon nanowires and indium phosphide nanowires in which some sections of the wires were doped with negative charge carriers (n-doped) and other sections were doped with positive charge carriers (p-doped) |
| UPDATE | 02.02 |
| AUTHOR | This data is not available for free |
| LITERATURE REF. | This data is not available for free |
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