| TECHNOLOGY |
Researchers say they have built the semiconductor industry’s smallest TRAN SISTORS that incorporate a novel insulating material aimed at significantly reducing the power used by Si chips. The new transistors use HAFNIUM OXI DE instead of SiO2 as the GATE INSULATOR, the thin layer that isolates the gate – responsible for turning current flow on & off – from the channel through which current flows. As today’s SiO2 layers are made thinner to su pport higher switching speeds, they are becoming more prone to letting elec trons leak through, thus wasting power & degrading transistor performance. Gate insulators that have a high dielectric constant, like HfO2, can be made thicker to block electron leakage while still enabling high switching speeds. Using atomic layer CVD, researchers deposited a uniform film of HfO2 in a innovative device structure known as Vertical Replacement-Gate (VRG) transistor. The device has a gate length of 50 nm – about half the size of lea ding-edge planar transistors. Leakage in this device was found to be > 5 orders of magnitude < than in SiO2 devices. The VRG transistor might one day replace today’s conventional planar transisor |
| UPDATE | 12.01 |
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