| PATENT ASSIGNEE'S COUNTRY | USA |
| UPDATE | 11.00 |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT CLAIMS |
Process for forming cured, globally planarized polymeric dielectric film on semiconductor substrate (a) Depositing polymeric dielectric film compn onto surface of semiconductor substrate, wherein said compn comprises material selected from siloxanes, silsesquioxane, polyarylene ethers, crosslinked polyarylene ethers, fluorinated polyarylene ethers, benzocyclobutene. (b) Partially curing deposited film (c) Performing CMP step to (b) until film is planarized (d) Subjecting polished film to additional cure step |
| PATENT PHOTOCOPY | Available on request |
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