| PATENT ASSIGNEE'S COUNTRY | USA |
| UPDATE | 10.00 |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT CLAIMS |
(a) Depositing Cu layer at room T onto substrate, wherein the Cu layer comprises a grain size < than the title features, crystal orientation other than most densely packed orientation & > 99% Cu (b) Exposing Cu layer, while maintained at T < 406C to processing gas at pressure = 20,000 pounds per square inch |
| PATENT PHOTOCOPY | Available on request |
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