Main > ELECTRONICS. > SemiConductor > Substrate > Anti-Reflective Coating > Aliphatic Thermoset Poly(Ester) > PhotoResist Plasma Etch Selectivity

Product USA. B. No. 1

PATENT ASSIGNEE'S COUNTRY USA
UPDATE 03.00
PATENT ASSIGNEE This data is not available for free
PATENT CLAIMS A method for making a thermosetting anti-reflective coating compn exhibiting an etch selectivity to novolac- & poly(hydroxystyrene)-ba
sed photoresists > 1.0 under oxygen plasma etch conditions, comprising
(a) Forming a light-absorbing hydroxyl-functional aliphatic polyester resin by condensation methods
(b) Purifying said resin by removal of residual solvents, starting materials, by-prodts & impurities from the resin by applying heat &/or vacuum, &/or by dissolving said resin in water-soluble solvent & precipitating the mixt into a large vol. of acidified water, after which the precipitated resin is collected & dried
(c) Combining said polyester resin with an alkyla
ted aminoplast crosslinker & protonic acid cure catalyst in a low-to-medium boiling solvent system wherein alc. comprises > 20%; & the overall formulation having total solids of 3-10%
Whereby the anti-reflective coating compn so formed can be applied by spin coating onto semi
conductor substrates & then baked at 120-225C to obtain uniform, crosslinked film which exhibits high optical d. at target exposing wavelength & shows no intermixing with subsequently applied photoresist
PATENT PHOTOCOPY Available on request

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