| PATENT ASSIGNEE'S COUNTRY | USA |
| UPDATE | 06.00 |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT CLAIMS |
In a method for mfg multilayer resist structures for microlithographic processing, the IMPROVEMENT comprising (a) Coating anti-reflective coating layer onto substrate comprising a hydroxyl-functional aliphatic condensation polymerized polyester resin (I), alkylated aminoplast crosslinker & protonic acid cure catalyst dissolved in low-to- medium boiling alc.-contg solvent system (b) Baking 120-225C for 30-120 sec (c) Overcoating a novolac- or poly(hydroxystyre ne)-based photoresist layer (d) Baking photoresist layer Whereby anti-reflective coating provides higher plasma etch selectivity to photoresist than coating in which the connecting structure of (I) is aromatic |
| PATENT PHOTOCOPY | Available on request |
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