| PATENT ASSIGNEE'S COUNTRY | USA |
| UPDATE | 08.99 |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT CLAIMS |
Claim 1: Photoresist developable in aq-alkali media comprising - Copolymer of -- CH2=CR-CO2-CH(OMe)-Me (8 - 100 %) -- Ethylene (92 - 0 %) - Acrylic Acid/Ethylene copolymer - Compd which forms acid on radiation exposure - Organic solvent Claim 14: Relief structure production on circuit board - Coating Cu laminated substrate with compn (Claim 1) - Removal of solvent by drying at 30 - 130C - Exposure to radiation through a mask - Development using aq alkaline soln - Etching - Removal of photoresist coat. which remains by stripping |
| PATENT PHOTOCOPY | Available on request |
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