| PATENT ASSIGNEE'S COUNTRY | Japan |
| UPDATE | 08.00 |
| PATENT ASSIGNEE | Canon |
| PATENT CLAIMS |
- Electroconductive substrate thickness = 0.1-2.5 mm - Amorphous Si photosensitive layer formed by plasma CVD to induce discharge at frequency = 50-450 MHz |
| PATENT PHOTOCOPY | Available on request |
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