| PATENT ASSIGNEE'S COUNTRY | Japan |
| UPDATE | 12.00 |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT CLAIMS |
A production method of a semiconductor device for filling in a wiring connection hole by sputtering deposition of Al or an alloy mainly comprising Al characterized by a process - First deposition Al or alloy at < 300C at thickness "A" - Followed by deposition of Al or alloy at > 300C at thickness "B" Wherein A > B Wherein deposition rate at > 300C is a rate which does not deteriorate the shape of a registration position measurement mark |
| PATENT PHOTOCOPY | Available on request |
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