Main > ELECTRONICS. > SemiConductor > Device > Photoresist > Positive Photoresist > Deep UV (193 nm) Photoresist > Over PU Undercoat

Product USA. A

PATENT ASSIGNEE'S COUNTRY USA
UPDATE 04.00
PATENT ASSIGNEE This data is not available for free
PATENT CLAIMS A photolithographic sensitive coated substrate suitable for imagewise exposure to deep UV (193 nm) radiation, comprising
- Substrate
- Thermally cured UNDERCOAT on substrate, said thermal
cured undercoat being a thermally cured polymer compn
of a hydroxyl-contg polymer & a polyfunctional isocyanate
cure agent, wherein the hydroxyl polymer comprises at
least one monomer selected from: hydroxyalkyl (meth)
acrylate, hydroxycycloalkyl (meth)acrylate, hydroxyalkyl
cycloalkyl (meth)acrylate, allyl alc., said undercoat having
been cured at 50-250C for < 3 min
- A deep UV (193 nm) radiation-sens. photoresist topcoat
on undercoat, said topcoat comprising a topcoat of a pho
toresist compn comprising chemically amplified deep UV
(193 nm) photosensitive polymer contg acid labile groups
& a photoacid generating compd generating acid upon
exposure to deep UV radiation
PATENT PHOTOCOPY Available on request

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