Main > ELECTRONICS. > SemiConductor > Epitaxy

Product GaN Layer. Thermal Mismatch. Elimination. USA. C.

PATENT ASSIGNEE'S COUNTRY USA
UPDATE 07.99
PATENT ASSIGNEE This data is not available for free
PATENT CLAIMS Method for fabricating thick layer of semiconductor material in single growth apparatus comprising
- Depositing in said apparatus at growth T using CVD techni
que an epitaxial layer of semiconductor material on an inter
layer predeposited on substrate, wherein epitaxial layer &
substrate are thermally mismatched, & epitaxy comprises
GaN etc
- Removing in growth apparatus all of the interlayer at growth
T prior to cool down using a gas phase etching technique
applied laterally to the interlayer so that epitaxial layer is
separated from substrate
- Cooling down the epitaxial layer & substrate
Whereby a thick high quality of semiconductor material having reduced thermal mismatch damage is produced
PATENT PHOTOCOPY Available on request

Want more information ?
Interested in the hidden information ?
Click here and do your request.


back