PATENT ASSIGNEE'S COUNTRY | USA |
UPDATE | 07.99 |
PATENT ASSIGNEE | This data is not available for free |
PATENT CLAIMS |
Method for fabricating thick layer of semiconductor material in single growth apparatus comprising - Depositing in said apparatus at growth T using CVD techni que an epitaxial layer of semiconductor material on an inter layer predeposited on substrate, wherein epitaxial layer & substrate are thermally mismatched, & epitaxy comprises GaN etc - Removing in growth apparatus all of the interlayer at growth T prior to cool down using a gas phase etching technique applied laterally to the interlayer so that epitaxial layer is separated from substrate - Cooling down the epitaxial layer & substrate Whereby a thick high quality of semiconductor material having reduced thermal mismatch damage is produced |
PATENT PHOTOCOPY | Available on request |
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