| PATENT ASSIGNEE'S COUNTRY | Japan |
| UPDATE | 06.99 |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT CLAIMS |
- Supplying reaction gas including P(III)-contg compd within Si-O-P structure - Contact. gas with substrate to form Si contg film including P2O3 |
| PATENT PHOTOCOPY | Available on request |
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