Main > ELECTRONICS. > SemiConductor > Device > Substrate > Silicon Substrate > SiO2/Metal. Removal > Gas Phase. Process

Product USA. A

PATENT ASSIGNEE'S COUNTRY USA
UPDATE 12.00
PATENT ASSIGNEE Air Products & Chemicals
PATENT CLAIMS - Contacting substrate with cleaning reagent at 50-125C to
form volatile by-prodts of said SiO2/Metal
- Removing said by-prodts from surface
Wherein said cleaning reagent is complex of HF & compd selected from
- 1,2-Propanedione
- Beta-diketone
- Beta-diketoimine: CH2(COMe)2
PATENT PHOTOCOPY Available on request

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