| PATENT ASSIGNEE'S COUNTRY | USA |
| UPDATE | 11.00 |
| PATENT ASSIGNEE | Advanced Micro Devices |
| PATENT CLAIMS |
Method of mfg a semiconductor device - Forming a Cu layer - Chemical mechanical polishing an upper surface of Cu la yer - Forming a sacrificial layer, comprising Sn, Ta, Cr or an alloy thereof, on the planarized surface of Cu layer - Heating to diffuse Sn, Ta &/or Cr into the upper surface of the Cu layer to form a passivating surface layer compri sing Cu & Sn, Ta &/or Cr leaving a remaining portion of the sacrificial layer - Removing the remaining portion of the sacrificial layer |
| PATENT PHOTOCOPY | Available on request |
|
Want more information ? Interested in the hidden information ? Click here and do your request. |