| PATENT ASSIGNEE'S COUNTRY | France |
| UPDATE | 09.99 |
| PATENT ASSIGNEE | Air Liquide SA |
| PATENT CLAIMS |
Product comprising a deposit of Si oxide on a substrate formed by a method comprising - Moving the substrate through an electrical discharge region - Subjecting the substrate to an electrical discharge in said region in presence of an atm contg (a) silane, (b) O & (c) carrier gas - Maintaining said atm at pressure > 10,000 Pa - Circulating said atm in said region & preventing entrainment of O other than forming part of said atm in said region, thereby forming Si oxide on said substrate |
| PATENT PHOTOCOPY | Available on request |
|
Want more information ? Interested in the hidden information ? Click here and do your request. |