| PATENT ASSIGNEE'S COUNTRY | USA |
| UPDATE | 07.00 |
| PATENT ASSIGNEE | Advanced Micro Devices |
| PATENT CLAIMS |
Method of etching tantalum - Etching at least a portion of tantalum using tantalum etch gas mixt comprising CF4 & O2 & using 900-1200 watts of power |
| PATENT PHOTOCOPY | Available on request |
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