| PATENT ASSIGNEE'S COUNTRY | USA |
| UPDATE | 07.00 |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT CLAIMS |
- Forming first conductive layer having an upper surface & side surfaces - Depositing layer of HSQ on upper & side surfaces, the HSQ layer having a first plasma etching rate & upper surface - Planarizing so that an upper surface of the HSQ layer is coplanar with upper surface of first conductive feature - Treating upper surface of the HSQ layer in a plasma to mo dify the HSQ upper surface to decrease the plasma etching rate of the HSQ upper surface to second plasma etching rate lower than that of the underlying portion of the HSQ layer |
| PATENT PHOTOCOPY | Available on request |
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