| PATENT ASSIGNEE'S COUNTRY | USA |
| UPDATE | 07.00 |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT CLAIMS |
Method of mfg a semiconductor device - Forming a patterned conductive layer, having conductive features with gaps therebetween, on first layer of dielectric material - Forming second layer of dielectric material on the patterned conductive layer filling the gaps & having a non-planar upper surface - Forming a third layer of dielectric material, different from the second dielectric material, on second dielectric layer - Planarizing an upper surface of the third dielectric layer - Forming a dielectric interlayer of hydrogen silsesquioxane directly on the planarized upper surface of third dielectric layer |
| PATENT PHOTOCOPY | Available on request |
|
Want more information ? Interested in the hidden information ? Click here and do your request. |