| PATENT ASSIGNEE'S COUNTRY | Taiwan |
| UPDATE | 06.00 |
| PATENT ASSIGNEE | Worldwide Semiconductor Mfg Corp |
| PATENT CLAIMS |
Method of forming a dual damascene structure including contacts & interconnects over a substrate - Forming an insulating layer on substrate, said insulating layer formed from BPSG or PSG - Forming nitride layer over said insulating layer - Forming a cap oxide layer over nitride layer; said cap oxide layer being SiO2 having higher reflow T than said insulating layer - Patterning & etching said 3 layers to correspond to the location of said contacts - Patterning & etching said nitride & cap oxide layers to correspond to pattern of interconnects - Performing a reflow process |
| PATENT PHOTOCOPY | Available on request |
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