| PATENT ASSIGNEE'S COUNTRY | Taiwan |
| UPDATE | 05.00 |
| PATENT ASSIGNEE | Vanguard International Semiconductor Corp |
| PATENT CLAIMS |
- Forming an anti-reflection layer over said metal layer - Forming a photoresist layer over said anti-reflection layer - Defining a metal layer pattern in said photoresist layer - Etching said anti-reflection layer with dimensional loss com pared with said metal layer pattern by using said photore sist layer as a mask, said anti-reflection layer etching step being performed with first reactive ion etch having a gas chemistry comprising CHF3 & at pressure of 6-12 militorr - Etching said metal layer with dimensional gain compared with said anti-reflection layer, by using said anti-reflection layer as a mask |
| PATENT PHOTOCOPY | Available on request |
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