| PATENT ASSIGNEE'S COUNTRY | USA |
| UPDATE | 03.00 |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT CLAIMS |
- Heat major surface of Si substrate to 515-635C - First implanting O cation at energy 70 - 200 keV into said major surface with dose (1-3.5) x 10 to 17th power/square. cm - Cooling to < 300C - Second implanting O cation at energy 70-200 keV into said major surface of Si substrate with dose (0.1-2) x 10 to 15th power/square.cm - First annealing at 1250-1400C in first ambient O2 at first concn - Second annealing at 1300-1400C in second ambient contg O2 at second concn |
| PATENT PHOTOCOPY | Available on request |
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